Researchers have found a way to grow nanishing networks on silicon surfaces

Researchers have developed a multiple growing technology with nanishing strictly controlled and fully reproducible.

Tiny needle crystal structures with a diameter of 5 to 100 nm are capable of influence the electricity or light passing through them. Nanishing can emit, concentrate and absorb light, so with their help you can integrate optical functions into electronic chips. For example, create lasers on them or place single-photon emitters for coding.

Until now, it was impossible to form homogeneous nanowire system systems in a certain position. However, researchers from the laboratory of semiconductor materials of the Federal Polytechnic School of Lausanne (EPFL) have developed technology for growing nanishing networks from liquid gallium strictly controlled and fully reproducible.

They focused on the management of the process of formation of the structure themselves, since before the main problem of production NanOnolocone was the impossibility of obtaining homogeneous elements and control their direction and position. Now scientists have shown that by changing the ratio of diameter to the height of the hole, you can fully control the growth of nanterine. With the right ratio, Gallium hardens in the ring around the edge of the opening, forming strictly perpendicular fibers. The technique is suitable for creating all types of nanowires.

The figure shows GaAs crystals inside the silicon oxide hole forming a complete ring or segment, depending on the size of the gallium drop.

Another team of EPFL with the help of lenses could practically