Scientists managed to create transparent thin-film transistors based on zinc oxide


Arabian researchers have developed a technology for the manufacture of custom transparent thin-film transistors from a single composite of Gafenia-zinc oxide (TFT HZO), by simply changing the ratio of metals in different layers.

The existing transparent electronics is based on indium and tin oxide, transparent and electrically conductive material, but extremely expensive due to the deficiency in in. The team of scientists from the Scientific and Technological University named after King Abdullah was looking for more affordable alternatives. As a result, they managed to create a transparent material based on zinc oxide, which demonstrates configurable electronic properties, depending on the change in a new type of doping impurity.

Thinking transistors usually contain electrode, dielectric and duct layers, which are applied to the substrate from various conducting, insulating and semiconductor materials. They also require special equipment to form different layers. According to Arabian scientists, the electronic properties of TFT HZO can be adjusted from the conductor to a semiconductor and an insulator with a high degree of control by simply changing the precursor ratio of zinc oxide / hafnium dioxide. Due to this, the cost of the cost and time of manufacture is reduced, which is crucial for mass production.

During testing, transistors based on doped zinc oxide demonstrated excellent electrical properties on glass and plastic, which makes them an excellent option for use in transparent and flexible displays with high resolution. They also show high performance when incorporated in the circuit, such as inverters and ring generators, which indicates their viability and scalability.

At the moment, the team is engaged in creating complex schemes on large areas to demonstrate the entire potential for their development.

The team of German scientists, which also studies the methods of improving transistors, recently found